Multi-layered memory devices

ABSTRACT

A multi-layered memory device is provided. The multi-layered memory device includes two or more memory units and an active circuit unit arranged between each of the two or more memory units. The active circuit includes a decoder. Each memory unit includes one or more memory layers. Each memory layer includes a memory array.

PRIORITY STATEMENT

This application is a divisional claiming the benefit under 35 U.S.C.§121 of U.S. application Ser. No. 12/232,146, filed on Sep. 11, 2008 nowU.S. Pat. No. 7,898,893, and claims priority under 35 U.S.C. §119 toKorean Patent Application Nos. 10-2007-0092651, filed on Sep. 12, 2007,and 10-2008-0047092, filed on May 21, 2008 in the Korean IntellectualProperty Office (KIPO), the entire contents of each of which areincorporated herein by reference.

BACKGROUND Description of the Related Art

In line with the developments of multimedia technologies, demand forlarger-capacity information storage devices for use in computers,communication devices, or the like are increasing. In order to satisfythis increasing demand, information devices having relatively highinformation storage density and relatively high operating speeds havebeen developed.

Conventionally, memory devices include an active circuit unit and amemory unit. The active circuit unit includes an address decoder, areading/recording logic controller, a sense amplifier, an output buffer,a multiplexer, and other components to read and record data. Thesecomponents are generally referred to as ‘overhead’, and occupy a portionof a physical memory area. If the area occupied by the overhead isrelatively small, a larger area is usable as a memory area. In order toincrease density of the memory devices, a research with the aim offorming a multi-layered memory device has been conducted.

SUMMARY

Example embodiments relate to multi-layered memory devices, for example,multi-layered memory devices having a multi-layer structure includingone or more memory layers arranged on at least one surface of an activecircuit unit.

Example embodiments provide a more highly integrated multi-layeredmemory device, which may increase data storage density.

At least one example embodiment provides a multi-layered memory device.According to at least this example embodiment, the multi-layered memorydevice may include two or more memory units and an active circuit unit.The active circuit unit may include a decoder, and be formed betweeneach of the two or more memory units.

At least one other example embodiment provides a multi-layered memorydevice. The multi-layered memory device may include a plurality ofmemory groups stacked on one another. The memory groups may include amemory unit and an active circuit configured to control the memory unit.

According to example embodiments, the memory unit may include one ormore memory layers. The one or more memory layers may be cross-pointtype memory arrays. The cross-point type memory array may have astructure in which adjacent memory array layers share an electrode. Aplurality of sub-arrays may be formed on the one or more memory layers.The active circuit unit may be formed on a non-silicon substrate. Thenon-silicon substrate may be one of a plastic substrate, a glasssubstrate, a ceramic substrate, an oxide substrate, and a nitridesubstrate. Each active circuit unit and corresponding memory unit may begrouped into a memory group. A plurality of the memory groups may bestacked on one another. Each active circuit unit may include at leastone of a column decoder (CD) and a row decoder (RD).

According to at least some example embodiments, column address linesextending from the CD may be connected to the memory unit through vias,and row address lines extending from the RD may be connected to the oneor more memory layers through vias.

According to at least some example embodiments, an active circuit unitmay include a first active circuit and a second active circuit. Thefirst active circuit may include a CD, whereas the second active circuitmay include a RD. The memory unit may be connected to each of the firstactive circuit and the second active circuit. Column address linesextending from the CD of the first active circuit may be connected tothe memory unit through vias, and row address lines extending from theRD of the second active circuit may be connected to the one or morememory layers through vias.

According to at least some example embodiments, a logic unit may beformed on a surface of one of the active circuit unit and the memoryunit. The multi-layered memory device may further include a memory areaformed on a substrate. The memory area may include the memory units andthe active circuit unit. An input/output (I/O) chip may be connected bythe memory area and a parallel bus line. A serial bus line may connectthe I/O chip and a master device.

At least one other example embodiment provides a multi-layered memorydevice. The multi-layered memory device may include at least one activecircuit and at least one memory unit. The at least one active circuitmay include a decoder. Each of the at least one memory units may beconnected to the decoder. The at least one memory unit may be separatefrom the at least one active circuit. The at least one active circuitmay be arranged above or below the at least one memory unit.

According to at least some example embodiments, the at least one memoryunit may include a plurality of memory layers stacked on one another.Each of the plurality of memory layers may be connected to the decoder.

According to at least some example embodiments, the decoder may includea column decoder and a row decoder. The column decoder may include afirst column decoder circuit arranged at a first side of the at leastone active circuit and a second column decoder circuit arranged at asecond side of the at least one first active circuit. The row decodermay include a first row decoder circuit arranged at a third side of theat least one active circuit and a second row decoder circuit arranged ata fourth side of the at least one active circuit. The first and secondsides may be opposite to each other, whereas the third and fourth sidesmay be opposite to each other.

According to at least some example embodiments, the decoder may beconnected to each of the at least one memory units via address linesextending upward or downward from the at least one active circuit. Thedecoder may include a column decoder and a row decoder. The columndecoder may be connected to each of the at least one memory unit viacolumn address lines extending vertically upward or downward from the atleast one active circuit. The column address lines may be connected tothe at least one memory unit through vias arranged at least one side ofthe first active circuit. The vias may be offset from one another in adirection perpendicular to the direction in which the at least one sideextends.

According to at least some example embodiments, the row decoder may beconnected to each of the at least one memory unit via row address linesextending vertically upward or downward from the at least one activecircuit. The row address lines may be connected to the at least onememory unit through vias arranged at least one side of the first activecircuit. The vias may be offset from one another in a directionperpendicular to the direction in which the at least one side extends.

According to at least some example embodiments, the at least one memoryunit may include at least one memory layer. The at least one memorylayer may include at least one memory array.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become more apparent by describing in detailexample embodiments thereof with reference to the attached drawings inwhich:

FIG. 1A is a diagram illustrating a multi-layered memory deviceaccording to an example embodiment;

FIGS. 1B through 1D are diagrams illustrating memory layers according toexample embodiments;

FIGS. 2A and 2B are diagrams illustrating multi-layered memory devicesaccording to example embodiments;

FIGS. 2C and 2D are diagrams for describing example driving principlesof multi-layered memory devices according to example embodiments;

FIG. 3 is a diagram illustrating a multi-layered memory device accordingto another example embodiment;

FIG. 4 is a diagram illustrating a multi-layered memory device accordingto another example embodiment;

FIG. 5 is a diagram illustrating a multi-layered memory device accordingto another example embodiment;

FIG. 6 is a diagram illustrating a multi-layered memory device accordingto another example embodiment;

FIGS. 7A and 7B are diagrams illustrating an array structure of adecoder circuit that is a part of an active circuit unit in a structurein which a memory unit is formed on a surface of the active circuit unitof a multi-layered memory device according to example embodiments;

FIGS. 8A and 8B are diagrams illustrating a structure of a multi-layeredmemory device in which one of a row decoder (RD) circuit and a columndecoder (CD) circuit is formed below a memory unit and the other one ofthe RD circuit and the CD circuit is formed above the memory unit, suchthat information of the memory unit is recorded in and read from themulti-layered memory device according to example embodiments;

FIGS. 9A and 9B are diagrams illustrating a structure of a multi-layeredmemory device in which vias v are formed alternately to increase densityof address lines diverging from a CD and a RD in the multi-layeredmemory device according to example embodiments; and

FIG. 10 is a diagram illustrating a multi-layered memory deviceaccording to example embodiments.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

Various example embodiments of the present invention will now bedescribed more fully with reference to the accompanying drawings inwhich some example embodiments of the invention are shown. In thedrawings, the thicknesses of layers and regions are exaggerated forclarity.

Detailed illustrative embodiments of the present invention are disclosedherein. However, specific structural and functional details disclosedherein are merely representative for purposes of describing exampleembodiments of the present invention. This invention may, however, maybe embodied in many alternate forms and should not be construed aslimited to only the embodiments set forth herein.

Accordingly, while example embodiments of the invention are capable ofvarious modifications and alternative forms, embodiments thereof areshown by way of example in the drawings and will herein be described indetail. It should be understood, however, that there is no intent tolimit example embodiments of the invention to the particular formsdisclosed, but on the contrary, example embodiments of the invention areto cover all modifications, equivalents, and alternatives falling withinthe scope of the invention. Like numbers refer to like elementsthroughout the description of the figures.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another. For example, a first element could be termed asecond element, and, similarly, a second element could be termed a firstelement, without departing from the scope of example embodiments of thepresent invention. As used herein, the term “and/or,” includes any andall combinations of one or more of the associated listed items.

Further, it will be understood that when an element is referred to asbeing “connected,” or “coupled,” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected,” or “directly coupled,” to another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between,” versus “directly between,” “adjacent,” versus“directly adjacent,” etc.).

Further still, it will be understood that when an element or layer isreferred to as being “formed on,” another element or layer, it can bedirectly or indirectly formed on the other element or layer. That is,for example, intervening elements or layers may be present. In contrast,when an element or layer is referred to as being “directly formed on,”to another element, there are no intervening elements or layers present.Other words used to describe the relationship between elements or layersshould be interpreted in a like fashion (e.g., “between,” versus“directly between,” “adjacent,” versus “directly adjacent,” etc.).

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments of the invention. As used herein, the singular forms “a,”“an,” and “the,” are intended to include the plural forms as well,unless the context clearly indicates otherwise. It will be furtherunderstood that the terms “comprises,” “comprising,” “includes,” and/or“including,” when used herein, specify the presence of stated features,integers, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features,integers, steps, operations, elements, components, and/or groupsthereof.

It should also be noted that in some alternative implementations, thefunctions/acts noted may occur out of the order noted in the figures.For example, two figures shown in succession may in fact be executedsubstantially concurrently or may sometimes be executed in the reverseorder, depending upon the functionality/acts involved.

A multi-layered memory device according to the present invention willnow be described more fully with reference to the accompanying drawings,in which exemplary embodiments of the invention are shown. In thedrawings, the thicknesses and widths of layers are exaggerated forclarity.

Multi-layered memory devices according to example embodiments may have astructure in which a plurality of memory units including one or morememory layers are formed. An active circuit unit may be included betweeneach of the plurality of memory units. The one or more memory layers maybe stacked to form each of the plurality of memory units. The activecircuit unit may control each of the plurality of memory units. Theactive circuit unit and each of the plurality of memory units may begrouped into a memory group. The multi-layered memory device may have astructure in which a plurality of the memory groups are stacked on oneanother. By forming the active circuit unit on a non-silicon substrate,each of the plurality of memory units and the active circuit unit may besequentially formed by a deposition process, not a bonding process. In amulti-layered memory device according to example embodiments, the activecircuit unit may be formed in any desired position of the bottom,middle, or top of the plurality of memory units.

FIG. 1A is a diagram illustrating a multi-layered memory deviceaccording to an example embodiment. Referring to FIG. 1A, a memory unit12 may include a plurality of memory layers a1 through an formed on asurface of an active circuit unit 11. The active circuit unit 11 and thememory unit 12 formed on the surface of the active circuit unit 11 mayconstitute an example embodiment of a multi-layered memory device. Thenumber of memory layers a1 through an capable of being formed on theactive circuit 11 is unlimited. The active circuit unit 11 may include adecoder. The decoder may further include a row decoder (RD) and a columndecoder (CD). Each of the plurality of memory layers a1 through an maybe formed to have an array structure including a plurality of memorycells.

Referring to FIG. 1B, each of the plurality of memory layers a1 throughan may be a cross-point type memory array structure. In the exampleembodiment shown in FIG. 1B, an information storage unit 103 and aswitch structure 104 (e.g., a diode, transistor or the like) may beformed at each cross-point between a plurality of first electrode lines101 formed in a first direction and a plurality of second electrodelines 102 formed in a second direction. The plurality of first electrodelines 101 and the plurality of second electrode lines 102 may be formedperpendicular or substantially perpendicular to one another. Theinformation storage unit 103 may have a memory structure having variousforms. For example, the information storage unit 103 may be formed of aferroelectric capacitor, a magnetoresistive element, a phase-changeelement, a variable-resistance element, an antifuse, and the like, whichare memory elements in a reversible structure or an irreversiblestructure. Also, adjacent memory layers from among the plurality ofmemory layers a1 through an may be formed to share an electrode, and bestacked.

Each of the plurality of memory layers a1 through an may include amemory array. FIG. 1C illustrates an example embodiment of a memoryarray 120. FIG. 1D illustrates another example embodiment of a memoryarray including a plurality of sub-arrays 121. Each of the plurality ofmemory layers a1 through an may include a memory array such as thememory arrays shown in FIGS. 1C and 1D. Each of the example embodimentsshown in FIGS. 1C and 1D may be used in conjunction with one another orseparate. For example, in an example embodiment, memory layer a1 may beconfigured as shown in FIG. 1C, whereas memory layer a2 may beconfigured as shown in FIG. 1D. The memory layers shown in FIGS. 1C and1D may be stacked alternately to form memory devices according toexample embodiments. Alternatively, each of the memory layers a1 throughan may be configured as shown in FIG. 1C. In another example, each ofthe memory layers a1 through an may be configured as shown in FIG. 1D.

FIGS. 2A and 2B are diagrams illustrating a multi-layered memory deviceaccording to another example embodiment. For example, FIGS. 2A and 2Billustrate a structure in which a memory group including an activecircuit unit and a memory unit are stacked sequentially.

Referring to FIG. 2A, the memory device may include a plurality ofmemory groups stacked on one another (e.g., vertically stacked). Each ofthe plurality of memory groups may include an active circuit and amemory unit. Each memory unit may include one or more memory layers. Forexample, a first memory group may include a first active circuit unit 21and a first memory unit 22. The first memory unit 22 may include aplurality of memory layers and may be arranged above (or on) the firstactive circuit 21. The first memory group may be formed on a logiccircuit or unit 20. The logic unit 20 may also serve as an activecircuit. A second memory group may include a second active circuit 23and a memory unit 24 arranged above or on a surface of the second activecircuit 23. The second memory group may be stacked on the first memorygroup. A third memory group may include a third active circuit 25 and athird memory unit 26 arranged above or on a surface of the third activecircuit 25. The third memory group may be arranged on the second memorygroup.

In the structure of FIG. 2A, each of memory units 22, 24, and 26 may beformed on each of active circuit units 21, 23, and 25, respectively. Thelogic unit 20 may include a logic circuit, and may select one or more ofthe active circuit units 21, 23, and 25. Each of the active circuitunits 21, 23, and 25 may include a decoder, and may select one or moreof the memory units 22, 24, and 26. The decoder may include a rowdecoder (RD) and a column decoder (CD).

Multi-layered memory devices according to at least this exampleembodiment may include a plurality of the active circuit units 21, 23,and 25 capable of selecting one or more memory units 22, 24, 26 andcapable of recording and reproducing information. The multi-layeredmemory devices may further include the logic unit 20 controlling theactive circuit units 21, 23, and 25. Conventional memory devices have astructure in which an active circuit unit is formed on a siliconsubstrate and a plurality of memory layers are formed on the activecircuit unit. However, the active circuit unit is designed to be asingle unit such that many via holes are necessary and a complicatedline process is required. Unlike the conventional art, the multi-layeredmemory device according to at least this example embodiment groups aplurality of memory layers and an active circuit unit controlling theplurality of memory layers into a memory group, and a plurality of thememory groups are stacked each other, thus, there is no limit in thenumber of memory units, which may be stacked.

Referring to FIG. 2B, according to at least this example embodiment, thememory device may include a plurality of memory groups, each includingan active circuit and a memory unit. Each memory unit may include aplurality of memory layers. The plurality of memory groups may bestacked on a logic circuit or unit.

In at least this example embodiment, a first memory unit 201 may beformed on a logic unit 200. A first active circuit unit 202 may beformed on the first memory unit 201. The first memory unit 201 and thefirst active circuit 202 constitute a first memory group. A secondmemory unit 203 and a second active circuit unit 204 may be formed onthe first active circuit unit 202. The second memory unit 203 and thesecond active circuit 204 constitute a second memory group. A thirdmemory unit 205 and a second active circuit unit 206 may be formed onthe second active circuit unit 204. The third memory unit 205 and thethird active circuit 206 constitute a third memory group.

In a structure of FIG. 2B, active circuit units 202, 204, and 206 may beformed on memory units 201, 203, and 205, respectively, and a memorygroup including a memory unit and an active circuit unit may besequentially stacked on the logic unit 200. The logic unit 200 mayinclude a logic circuit, and may select one or more of the activecircuit units 202, 204, and 206. Each of the active circuit units 202,204, and 206 may include a decoder, and may select one or more of thememory units 201, 203, and 205. The decoder may include a row decoder(RD) and a column decoder (CD).

FIGS. 2C and 2D are diagrams for describing a driving principle of amulti-layered memory device according to example embodiments.

Referring to FIG. 2C, the multi-layered memory device according to atleast one example embodiment may have a structure in which a pluralityof memory units M and a plurality of active circuit units D are formedon a logic unit 210 (e.g., as shown in FIG. 2A or 2B). The logic unit210 may be connected to the plurality of active circuit units D throughdecoder selection lines 221, and may select a specific active circuitunit from among the plurality of active circuit units D. An address (arow and a column) of a desired memory cell may be input through a memoryaddress selection line connected to the logic unit 210 and the pluralityof active circuit units D. A memory address selection signal may beinput through a row line 222 a and a column line 222 b. A specificmemory layer of the plurality of memory units M may be selected througha memory level decoder. This will be described in detail below withreference to FIG. 2D.

Referring to FIG. 2D, a plurality of memory units 211 and 213, and aplurality of active circuit units 212 and 214 may be formed on the logicunit 210. The first active circuit unit 212 may write and read data toand from the first memory unit 211. The second active circuit unit 214may write and read data to and from the second memory unit 213. When anactive circuit unit and a memory unit are grouped into memory groupsdenoted by G in FIG. 2D, a plurality of (e.g., an unlimited number of)memory groups G may be formed on the second active circuit unit 214.

The logic unit 210 may be connected to each of the active circuit units212 and 214 through the decoder selection lines 221. The logic unit 210may select a specific active circuit unit from among the active circuitunits 212 and 214, through the decoder selection lines 221. For example,in the case where the first active circuit unit 212 is selected, aselection line s1 may be ON, whereas the rest of the decoder selectionlines 221 may be OFF. Subsequently, an address (a row and a column) of adesired memory cell may be input through a memory selection line 222connected to the logic unit 210 and the plurality of active circuitunits 212 and 214. Only the first active circuit unit 212 may be in anON-state, and thus, only an address of specific memory cells in each ofmemory layers of the first memory unit 211 may be input. Afterward onlya specific memory layer of the first memory unit 211 may be selectedthrough the memory level decoder. As a result, the desired memory cellmay be selected.

FIG. 3 is a diagram illustrating a multi-layered memory device accordingto another example embodiment. According to at least this exampleembodiment, a memory unit may be formed on each of a plurality of sidesof an active circuit.

Referring to FIG. 3, memory units 32 and 33 may be formed on top andbottom (e.g., both) surfaces of an active circuit unit 31. The firstmemory unit 32 may include one or more (e.g., a plurality of) memorylayers b1 through bn. The second memory unit 33 may include one or more(e.g., a plurality of) memory layers c1 through cn. There is no limit inthe number of memory layers capable of being included in the memoryunits 32 and 33. The active circuit unit 31 may include a decodercapable of selecting one or more memory layers b1 through bn of memoryunit 32 and/or one or more of memory layers c1 through cn of memory unit33. The active circuit 31 may include a sense amplifier, a buffer, astep-down circuit, a boosting circuit, a detecting circuit, and/or areference voltage circuit.

FIG. 4 is a diagram illustrating a multi-layered memory device accordingto another example embodiment. FIG. 4 illustrates a structure in which aplurality of the memory groups, each of which includes an active circuitunit and one or more memory units formed on both (e.g., opposite)surfaces of the active circuit unit, may be stacked on one another.

Referring to FIG. 4, a first memory group may be arranged on a logiccircuit 40. The first memory group may include a first active circuitunit 42 and a second memory unit 43 formed on opposite surfaces of afirst memory unit 41. A second memory group may be formed above thefirst memory group. The second memory group may include a third memoryunit 44 and a fourth memory unit 45 formed on opposite surfaces of asecond active circuit unit 45. The logic unit 40 may include a logiccircuit, and may select one or more of the active circuit units 42 and45. Each of the active circuit units 42 and 45 may include a decoder.The active circuit unit 42 may select one or more of the memory units 41and 43 formed on surfaces of the active circuit unit 42. The activecircuit unit 45 may select one or more of the memory units 44 and 46formed on surfaces of the active circuit unit 45.

FIG. 5 is a diagram illustrating a multi-layered memory device accordingto another example embodiment. In the multi-layered memory device ofFIG. 5, a column decoder (CD) and a row decoder (RD) may be formed onseparate layers so as to select a memory unit.

Referring to FIG. 5, a first memory unit 53 may be formed on a firstactive circuit unit 51 a. A second active circuit unit 52 a, a secondmemory unit 54, and a third active circuit unit 51 b may be formed onthe first memory unit 53. The first active circuit unit 51 a and thethird active circuit unit 51 b may include one of the CD and the RD. Ifthe first active circuit unit 51 a and the third active circuit unit 51b include the CD, the second active circuit unit 52 a may include theRD. Alternatively, if the first and third active circuit units 51 a and51 b include the RD, then the second active circuit 52 a may include theCD.

The first memory unit 53 may include one or more memory layers d1through dn, and the second memory unit 54 may include one or more memorylayers e1 through en. There is no limit in the number of memory layerscapable of being formed on the active circuit units. Each of the activecircuit units 51 a, 52 a, and 51 b may be connected to one or more ofthe first and second memory units 53 and 54 in upper and lowerdirections so as to select the one or more memory layers d1 through dnof the first memory unit 53 or the one or more memory layers e1 throughen of the second memory unit 54. For example, if the first activecircuit unit 51 a includes the CD and the second active circuit unit 52a includes the RD, the first and second active circuit units 51 a and 52a may be used to select the one or more memory layers d1 through dn ofthe first memory unit 53. Similarly, if the third active circuit unit 51b includes the CD and the second active circuit unit 52 a includes theRD, the second and third active circuit units 52 a and 51 b may be usedto select the one or more memory layers e1 through en of the secondmemory unit 53

FIG. 6 is a diagram illustrating a multi-layered memory device accordingto another example embodiment.

Referring to FIG. 6, a first active circuit unit 61 and a first memoryunit 64 may be formed on a logic unit 60. A second active circuit unit62 and a second memory unit 65 may be formed on the first memory unit64. A third active circuit unit 63 and a third memory unit 66 may beformed above the second memory unit 65. The logic unit 60 may include alogic circuit, and may select one or more of the active circuit units61, 62, and 63. Each of the active circuit units 61, 62, and 63 mayinclude one of a CD and a RD, and may respectively select one or more ofthe memory units 64, 65, and 66. According to at least this exampleembodiment, the first memory unit 64 may be formed on a second surfaceof the active circuit unit 61 and on a first surface of the secondactive circuit 62. The second memory unit 65 may be formed on a secondsurface of the second active circuit unit 62 and a first surface of thethird active circuit unit 63. The third memory unit 66 may be formed ona second surface of the third active circuit unit 63. By sequentiallyforming an active circuit unit including the CD or the RD and a memoryunit on the logic unit 60, a stacked structure may be formed.

Alternatively, each of the active circuit units 61, 62, and 63 mayinclude both the CD and the RD. In at least this example embodiment, theCD of the first active circuit unit 61 and the RD of the second activecircuit unit 62 may be used to address the first memory unit 64. The CDof the second active circuit unit 62 and the RD of the third activecircuit unit 63 may be used to address the second memory unit 65.

Alternatively, the RD of the first active circuit unit 61 and the CD ofthe second active circuit unit 62 may be used to address the firstmemory unit 64, and the RD of the second active circuit unit 62 and theCD of the third active circuit unit 63 may be used to address the secondmemory unit 65.

As described above, memory layers of the multi-layered memory deviceaccording to at least some example embodiments may be formed as across-point type memory array. For example, a plurality of lowerelectrode lines and a plurality of upper electrode lines crossing theplurality of lower electrode lines may be formed in each of the memorylayers, and a switch structure and an electric charge storage structuremay be sequentially formed in an area where the plurality of lower andupper electrode lines cross each other. The plurality of lower electrodelines and the plurality of upper electrode lines may be individuallyconnected to the RD or the CD of the active circuit unit.

Each of the memory layers may include a memory array, and unlike theconventional technology, may not include a separate memory array enablecircuit. In multi-layered memory devices according to at least someexample embodiments, the logic unit 60 may be formed on a siliconsubstrate or a non-silicon substrate. For example, after the logiccircuit forming the logic unit 60 is formed on one of the siliconsubstrate and the non-silicon substrate, an interlayer dielectrics (ILD)process may be performed. The memory unit and the active circuit unitmay then be formed repeatedly on the logic unit 60. Examples of thenon-silicon substrate are a plastic substrate, a glass substrate, aceramic substrate, an oxide substrate, or a nitride substrate. Theactive circuit unit may include a decoder, and optionally, a senseamplifier, a buffer, a step-down circuit, a boosting circuit, adetecting circuit, and/or a reference voltage circuit. Conventionally,the active circuit unit is formed on the silicon substrate such that anarea is limited, a processable memory cell area is also limited, and thenumber of stackable memory layers is limited. However, according toexample embodiments, the active circuit unit may be formed between eachof memory units so that such limits may be overcome.

FIGS. 7A and 7B are diagrams illustrating an array structure of adecoder circuit of an active circuit unit in a structure in which amemory unit is formed on one surface of the active circuit unit of amulti-layered memory device according to another example embodiment.Each decoder circuit may include a RD and a CD.

Referring to FIG. 7A, a RD and a CD may be formed on an active circuitunit 71. Row address lines r extending upward from the RD connect theactive circuit unit 71 to a memory unit 72 arranged above the activecircuit unit 71 through vias V. Column address lines c extending upwardfrom the CD also connect the active circuit unit 71 to the memory unit72 through vias V. If the memory unit 72 includes one or more memorylayers, the row address lines r and the column address lines c may beconnected to each of the one or more memory layers.

Referring to FIG. 7B, an active circuit unit 701 may include a RD and aCD. Row address lines r extending downward from the RD connect theactive circuit unit 701 to a memory unit 702 arranged below the activecircuit unit 701 through vias V. Column address lines c extendingdownward from the CD also connect the active circuit unit 701 to thememory unit 702 through vias V. If the memory unit 702 includes one ormore memory layers, the row address lines r and the column address linesc may be connected to each of the one or more memory layers.

In a structure in which the RD and the CD are formed on the activecircuit unit 701, and memory units (each of which includes a pluralityof memory layers) are formed on both top and bottom surfaces of theactive circuit unit 701, the row address lines r and the column addresslines c may be connected to each of the plurality of memory layers.

FIGS. 8A and 8B are diagrams illustrating a structure of a multi-layeredmemory device in which one of a RD circuit and a CD circuit is formedbelow a memory unit, and the other one of the RD circuit and the CDcircuit is formed above the memory unit, such that information isrecorded in and read from multi-layered memory devices according toexample embodiments.

Referring to FIG. 8A, a memory unit 82 and a second active circuit unit83 may be sequentially formed on a first active circuit unit 81. A CDmay be formed on the first active circuit unit 81, and a RD may beformed on the second active circuit unit 83. Column address lines cextending upward from the CD of the first active circuit unit 81 may beconnected to the memory unit 82 through vias V. As shown in FIG. 8A, theCD of the first active circuit unit 81 may be connected to memory unit82 in an alternating manner such that adjacent columns of the memoryarray are connected to different sides of the CD. For example, a firstof two adjacent columns may be connected to a via V at a first side ofthe first active circuit unit 81, whereas a second of two adjacentcolumns of the memory unit 82 may be connected to a second, oppositeside of the CD. Row address lines r extending downward from the RD ofthe second active circuit unit 83 may be connected to the memory unit 82through vias V. As shown in FIG. 8A, the RD of the second active circuitunit 83 may be connected to memory unit 82 in an alternating manner suchthat adjacent rows of the memory array are connected to different sidesof the RD. For example, a first of two adjacent rows may be connected toa via V at a first side of the second active circuit unit 83, whereas asecond of two adjacent rows of the memory unit 82 may be connected to asecond, opposite side of the second active circuit unit 83. The firstand second side to which the row address lines r are connected may bedifferent from the first and second sides that the column address linesc are connected.

If the memory unit 82 is formed to have a plurality of memory layers,the row address lines r and the column address lines c may be connectedto each of the plurality of memory layers.

In FIG. 8B, column address lines c extending upward from a CD of a firstactive circuit unit 801 may be connected to a memory unit 802 throughvias V on only one side end of the first active circuit unit 801. Rowaddress lines r extending from a RD of a second active circuit unit 803may be connected to the memory unit 802 through vias V at only a frontend of the second active circuit unit 803. If the memory unit 802includes a plurality of memory layers, the row address lines r and thecolumn address lines c may be connected to each of the plurality ofmemory layers.

FIGS. 9A and 9B are diagrams illustrating a structure of a multi-layeredmemory device in which vias V are formed alternately to increase densityof address lines extending from a CD and a RD in the multi-layeredmemory device according to another example embodiment.

Referring to FIG. 9A, a RD and a CD may be formed on ends of respectivefirst and second sides of an active circuit unit 91. A memory unit 92may be formed below the active circuit unit 91. Row address lines r andcolumn address lines c extending from the RD and the CD, respectively,of the active circuit unit 91, may be connected to the memory unit 92through vias V. The vias V may be formed alternately offset from oneanother in a given direction. For example, the vias V connected to therow address lines r may be offset from one another in a direction thatis perpendicular to a direction in which the first side of the activecircuit unit 91 extends. Similarly, the vias V connected to the columnaddress lines c may be offset from one another in a direction that isperpendicular to a direction in which the second side of the activecircuit unit 91 extends.

Referring to FIG. 9B, an active circuit unit 901 may include a RD and aCD. In this example embodiment, a CD may be formed on ends of first andsecond sides of the active circuit unit 901, and the RD may be formed onends of third and fourth sides of the active circuit unit 901. The firstand second sides may be opposite to one another, and the third andfourth sides may be opposite to one another. A memory unit 902 may beformed below the active circuit unit 901. Row address lines r and columnaddress lines c extending from the RD and the CD, respectively, of theactive circuit unit 901, may be connected to the memory unit 902 throughvias V. The vias V may be formed alternately offset from one another ina given direction. For example, the vias V connected to the row addresslines r may be offset from one another in a direction that isperpendicular to a direction in which the first and second sides of theactive circuit unit 901 extends. Similarly, the vias V connected to thecolumn address lines c may be offset from one another in a directionthat is perpendicular to a direction in which the third and fourth sidesof the active circuit unit 901 extends.

The position and shape of vias Via V may be selectively determinedaccording to configuration and/or density of an array device of thememory units 92 and 902, but example embodiments are not limitedthereto. The active circuit unit and the memory unit illustrated in eachof FIGS. 7A through 9B may be grouped into a memory group, and thememory group may be stacked repeatedly. Thus, connection lines may besimplified to reduce the number of vias as compared to a conventionalmemory device using only a single active circuit unit.

FIG. 10 is a diagram illustrating a multi-layered memory deviceaccording to another example embodiment.

Referring to FIG. 10, the multi-layered memory device 100 may include amemory area 102 formed on a substrate 101, an input/output (I/O) chip104, a parallel bus line 103 connecting the memory area 102 and the I/Ochip 104, and a serial bus line 105 connecting the I/O chip 104 and amaster device or module (not shown). The memory area 102 may have amulti-layered structure, for example, as discussed above.

According to example embodiments, various electronic elements may bemanufactured given the knowledge of one of ordinary skill in the art.Multi-layered memory devices according to example embodiments may beused as, for example, media devices for various products, such as,mobile or cellular phones, smart phones, personal digital assistants(PDAs), laptop or desktop computers, digital cameras, digitalcamcorders, MP3 or other portable music player, etc.

While example embodiments have been particularly shown and describedwith reference to the example embodiments shown in the drawings, it willbe understood by those of ordinary skill in the art that various changesin form and details may be made therein without departing from thespirit and scope of the present invention as defined by the followingclaims.

What is claimed is:
 1. A multi-layered memory device, comprising: aplurality of memory groups stacked on each other, each memory groupincluding, a memory unit, and an active circuit unit configured tocontrol the memory unit, wherein the active circuit unit includes atleast one of a column decoder and a row decoder, the column decoderincludes a first column decoder circuit at a first side of the activecircuit unit and a second column decoder circuit at a second side of theactive circuit unit, the first and second sides of the active circuitunit are opposite each other, the row decoder includes a first rowdecoder circuit at a third side of the active circuit unit and a secondrow decoder circuit at a fourth side of the active circuit unit, and thethird and fourth sides of the active circuit unit are opposite to eachother.
 2. The multi-layered memory device of claim 1, wherein the memoryunit includes one or more memory layers.
 3. The multi-layered memorydevice of claim 2, wherein the one or more memory layers are across-point type memory array.
 4. The multi-layered memory device ofclaim 3, wherein a plurality of sub-arrays are formed on the one or morememory layers.
 5. The multi-layered memory device of claim 3, whereinthe cross-point type memory array has a structure in which adjacentmemory layers share electrodes.
 6. The multi-layered memory device ofclaim 1, wherein the active circuit unit is formed on a non-siliconsubstrate.
 7. The multi-layered memory device of claim 1, wherein columnaddress lines connect the column decoder to the memory unit throughvias, and row address lines connect the row decoder to the memory unitthrough vias.
 8. A multi-layered memory device, comprising: a pluralityof memory groups stacked on each other, each memory group including, amemory unit, and an active circuit unit configured to control the memoryunit, wherein the active circuit unit includes a first active circuitunit having a column decoder and a second active circuit unit having arow decoder, the memory unit being connected to each of the first activecircuit unit and the second active circuit unit, the column decoderincludes a first column decoder circuit at a first side of the activecircuit unit and a second column decoder circuit at a second side of theactive circuit unit, the first and second sides of the active circuitunit are opposite each other the row decoder includes a first rowdecoder circuit at a third side of the active circuit unit and a secondrow decoder circuit at a fourth side of the active circuit unit, and thethird and fourth sides of the active circuit unit are opposite to eachother.
 9. The multi-layered memory device of claim 8, wherein columnaddress lines connect the column decoder of the first active circuitunit to the memory unit through vias, and row address lines connect therow decoder of the second active circuit unit to the memory layersthrough vias.
 10. The multi-layered memory device of claim 1, furtherincluding, a logic unit formed on a surface of one of the active circuitunit and the memory unit.
 11. The multi-layered memory device of claim1, further comprising: column address lines; row address lines; andvias, wherein the active circuit includes the column decoder and the rowdecoder, the column address lines connect the first column decodercircuit and the second column decoder circuit to the memory unit throughsome of the vias, and the row address lines connect the first rowdecoder circuit and the second row decoder circuit to the memory unitthrough others of the vias.
 12. The multi-layered memory device of claim11, wherein a portion of the vias connected to the column address linesare offset from an other portion of the vias connected to the columnaddress lines in a direction that is perpendicular to a direction thatthe first and second sides of the active circuit extend, and a portionof the vias connected to the row address lines are offset from an otherportion of the vias connected to the row address lines in a directionthat is perpendicular to a direction that the third and fourth sides ofthe active circuit extend.
 13. The multi-layered memory device of claim1, wherein the active circuit unit is on the memory unit.
 14. Themulti-layered memory device of claim 8, further comprising: columnaddress lines; row address lines; and vias, wherein column address linesconnect the first column decoder circuit and the second column decodercircuit of the column decoder to the memory unit through some vias, androw address lines connect the first row decoder circuit and the secondrow decoder circuit of the row decoder to the memory layers throughother vias.
 15. The multi-layered memory device of claim 14, wherein aportion of the vias connected to the column address lines are offsetfrom an other portion of the vias connected to the column address linesin a direction that is perpendicular to a direction that the first andsecond sides of the active circuit extend, and a portion of the viasconnected to the row address lines are offset from an other portion ofthe vias connected to the row address lines in a direction that isperpendicular to a direction that the third and fourth sides of theactive circuit extend.
 16. The multi-layered memory device of claim 8,wherein the memory unit includes one or more memory layers, and the oneor more memory layers are a cross-point type memory array.
 17. Themulti-layered memory device of claim 16, wherein a plurality ofsub-arrays are formed on the one or more memory layers.
 18. Themulti-layered memory device of claim 17, wherein the cross-point typememory array has a structure in which adjacent memory layers shareelectrodes.
 19. The multi-layered memory device of claim 9, wherein theactive circuit unit is on the memory unit.